Research And Design Of Silicon-based Power Amplifier And Low-power Mixer

With the rapid development and update of modern communication technology,5G mobile communication,Internet of things and Internet of vehicles have constantly attracted extensive attention from academia and industry,with broad application prospects and broad market potential.People's demand for wireless communication also requires that wireless communication equipment can be used at any time and any place,so communication equipment with smaller size,lower power consumption and better performance is more and more popular among people,which greatly promotes the booming development of integrated circuit industry.Although the traditional III-V group(such as GaAs,InP,etc.)material chips have higher linearity and higher power efficiency,but the high cost,integration difficulty,poor thermal conductivity and other nonnegligible shortcomings have become huge obstacles for people to pursue circuit miniaturization,low power consumption,and low cost.SiGe process and Si process can be compatible with a high level of integration,and low manufacturing cost,low power consumption,which will gradually replace III-V material chip position in the market.Therefore,design and research of high performance silicon communications chips to satisfy people's demand for wireless communication system,which is of vital significance to the development of wireless communication system.Based on the information mentioned above,this paper studies and designs a power amplifier of Internet of things frequency band(LoRa(470M-510MHz),eMTC(700M-960MHz),NB-IoT(700M-960MHz)based on IBM 0.13-?m SiGe BiCMOS 8HP process and a low-power mixer of Internet of vehicles frequency band(5.9GHz)based on IBM 0.13-?m CMOS process.Based on the traditional Cascode(common source and common gate)structure,the power amplifier adopts multiple(5 layers)stacked structure to increase the swing of the output voltage and thus increase the output power.When the output power is fixed,the multi-layer transistor superposition structure can greatly reduce the current.At low frequency,due to the large inductance,this method can reduce the cross section width of the inductance,so as to reduce the inductance area.At the same time,the input and output of the amplifier use RC feedback to increase the stability of the circuit.In addition,based on the traditional Gilbert structure,the low-power mixer removes the tail current source and uses LC parallel as the load,which reduces the circuit stack to reduce the power supply voltage,and achieves the effect of reduced power consumption.At the same time,the bias voltage of the transconductor-level transistor is in the subthreshold region,which therefore further greatly reduced the power consumption of the circuit.The layout simulation results of the NB-IoT frequency power amplifier designed in this paper show that under 7.5V power supply voltage,the small signal gain is greater than 20 dB,the maximum output power is 28.1dBm,output P1 dB is 26.5dBm,the maximum power additional efficiency(PAE)is 40%,and the chip area(including PAD)is 1200 ?m×1000 ?m.Simulation results of low power mixer in Internet of vehicles: at 1.1v power supply,frequency conversion gain is 5.8dB,output P1 dB is-2.4dBm,power consumption is 0.985 mW,the output third order intermodulation is 5.1dBm.The chip area of the core circuit is 440 ?m×360 ?m.