Research On Silicon-based Millimeter-Wave Phase Shifter And Power Amplifier Integrated Circuit

In recent years,satellite communications and phased array radars have continued to develop,and research into high-performance radio frequency communication components has become the current mainstream.The key indicators of the RF phase shifter is the insertion loss and precision of phase shift,between them has certain mutual constraints,so how to ensure accuracy of phase-shifting good cases,insertion loss,improve the RF phase shifter is an important issue to consider.Power amplifier performance is mainly composed of linearity,output power and efficiency factors,so the PA's main problem is how to satisfy the linearity under the condition of high it can improve the efficiency.This paper focuses on the design of RF microwave millimeter-wave silicon based integrated circuits in phased array radar systems.In the first chapter,the background and significance of the research of silicon microwave millimeter wave phase shift and amplifier integrated circuit are studied.This paper analyzes the urgent need of phased array radar for high performance phase shifter and power amplifier,and introduces the important role of phase shift and amplification.Secondly,the technology of germanium silicon will be and the advantages and disadvantages of the process and silicon base process were compared.This paper summarizes the current research status of phase shifter and power amplifiers and describes the methods and methods of realizing the high performance of phase shifter and amplifier.Finally,introduce the structure arrangement of this paper.This paper will continue to explore in the following research,and try to propose new structures to design RF switches and power amplifiers that meet higher requirements.Based on the research and summary of literature at home and abroad study respectively in chapter 2,the RF digital phase shifter and the basic principle of power amplifier,research its development situation at present stage,the challenge for related problems and the current reach indicator;Based on the research and comparison of the phase shifter and the amplifier topology,selecte and optimize the suitable topological structure,and the accuracy of the phase shifter and the output power of the amplifier were studied.Through the above research,in the third chapter design two respectively in the16th GHz and 28 GHz digital phase shifter,adopt new and suitable for the topology of the two frequencies,in the high frequency gain more precision accuracy of phase shift and lower insertion loss.The 14 GHz digital phase shifter use IBM 0.35 um BiCMOS technology,The RMS phase shift error is less than 5°,insertion loss is less than 14 dB,input and output return loss and return loss under-8dB,chip area in the case of contained pad of 1.4×0.93 mm~2.The 28GHz digital phase shifter use GF 55 nm CMOS technology,The phase shift insertion loss is less than 12dB,input and output return loss and return loss under-8 dB,chip area in the case of contained pad of 1.78×0.65 mm~2.Through investigation of 77GHz anti-collision radar and the spectrum of the requirement of the power amplifier,in the fourth chapter used IBM 0.13um BiCMOS process design can work with the frequency of the power amplifier,and has a high output power and efficiency.Its P1dB is greater than 12dBm and its efficiency is around20%.