Investigations On W-band Silicon-based Power Amplifier

With the rapid development of wireless communication technology and people demand higher communication speed in recent years,the millimeter wave communication technology becomes a research hot.Because the millimeter wave has large bandwidth that supports a high communication speed.The research of power amplifier has significant value because that the power amplifier as a core block in communication system.W-Band millimeter wave power amplifiers based on 0.13?m SiGe BiCMOS process are introduced in this thesis.The device used in the millimeter power amplifier such as active devices HBTs and passive devices inductors,capacitors,transmission lines,baluns and transformers are analyzed in this thesis.Their millimeter wave characteristics are precisely analyzed by the simulation software.And a three stages fully differential Cascode W-band power amplifier is designed in 0.13?m SiGe BiCMOS process.The Marchand balun is used in the input and output port to realize balance ports transfer to unbalance ports.The balun's simulation loss is about 1.4dB at 104GHz.The transmission line inductor is used in Cascode stage to enhance the stability of PA.The PA's layout is completed and then taped out.The power amplifier exhibits a measured peak gain of 17 dB at 104 GHz,and with a 3 dB bandwidth of 15 GHz from 95 to 110 GHz.Its total layout area is 0.9mm~2 contain ESD circuits.Base on the above designed PA,a new two stages differential W-band PA is designed in same process.The transformer is used for the PA's interstage matching network.And its'baluns also are realized by transformer in the input and output port.The PA's simulation result shows that it has 15dB gain at 100GHz.Its maximum PAE is about 4.5%,the power saturation output power is12.8dBm.The PA's core layout area is 0.21mm~2.