13 Bit High Resolution Temperature Senser Design And Completed

Each subsystem or sub module of the weapon equipment has a set of temperature control systems to monitor the working temperature of the subsystems or sub modules,to ensure that the work is at the appropriate temperature and to ensure the reliability of the whole system.The traditional temperature control system consists of"analog temperature sensor+high-precision AD converter+signal processing circuit".Such a complex system is susceptible to external interference,so debugging is very difficult,so the control accuracy is not high.The high precision temperature AD converter integrates the above three parts into a single chip,which has remarkable characteristics:The first is the integration of high precision A/D converter and signal processing circuit,the direct output of digital quantity.The second is greatly simplifying the system design,reducing the difficulty of debugging and reducing the system cost;the third is to transmit data with high precision algorithm and single bus technology,improving measurement accuracy?less than 1??,reducing external interference and shortening development cycle.The biggest advantage is that it is based on the commercial IC process line,which can be mass stabilized and mass produced to solve the reliability and long-term availability.This paper is aimed at the above problems,with the realization of high precision temperature sensor integration as the main research object.On the basis of in-depth analysis of the theory and technology principle of temperature sensor today,the design framework of temperature sensor and EEPROM modification technology are discussed and studied in detail.The main contents are as follows:1.Research substrate PNP transistor optimization technology,through the analysis of the contradiction between the four parameters of the substrate I_kf,V_ar,?and R_b and the depth and concentration of the well area,based on the test results of the five groups of different graphics processing,select a vertical PNP transistor with suitable emitter area and uniform distribution of base area concentration.The delta V_bee voltage inside the temperature sensor chip is formed by the transistor,and the accuracy of the sensor circuit part is optimized.2.Through studying the high-precision temperature sensor architecture,and an autonomous architecture design technology based on EEPROM trimming mode to realize temperature sensor of±4?accuracy is proposed.In this method,the EEPROM structure of the chip is adjusted by the input signal of the serial interface,and the parameters of the module such as the bias current,the reference voltage and the sensor array are corrected to shorten the design and development cycle and improve the overall product consistency.3.Research on the low power design technology of temperature sensor,based on the temperature sensor of the actual measurement is the temperature of the bare chip itself in the package cavity.If the power consumption of the chip is large,the thermal resistance of the package will lead to the temperature rise in the inside of the package,so that the temperature of the bare chip is quite different from the outside temperature of the chip,thus causing the temperature to turn.In order to change the error,a low power design method is proposed.This method combines the characteristics and design requirements of dynamic and static power consumption.It optimizes the design of gate control clock circuit,gate control power supply circuit,turn-off bias current circuit and so on.At the same time,under the premise of meeting the parameter requirements,the design margin of the analog circuit speed and accuracy index is reduced as much as possible,and the overall synthesis has a lower power consumption performance.