Handset RF Front End Based On SOI CMOS Process Switch Key Technology Research

Nowadays,mobile phones become essential communication means for people.In order to be able to achieve better call quality and higher network speed,the wireless communication standard has undergone four generations of innovations.At the same time,the hardware as the cornerstone of mobile communications,mobile phone front-end RF link architecture is also rapidly updating the development.In order to achieve better call quality and higher network speed,today's mobile phone RF front-end links need to support multiple frequency bands in multiple formats and multiple modes of operation to receive and transmit RF signals.Therefore,the design and verification of solutions for mobile RF front-ends that are easy to integrate with high performance and low cost have always been one of the focuses of scientific research in recent years.RF switch as the front-end link indispensable important device,which plays the exact synchronous gating corresponding radio frequency channel to connect and receive radio and frequency channel of the important functions.So it is instructive to study the design method of RF switch and the corresponding technical difficulties of SOI CMOS process.Due to the dramatic increase in handset RF front-end integration,the switches are now integrated into PA modules and work in conjunction with PA,filters,and MIPI RFFE controllers.This paper first in-depth analysis the SOI CMOS process for the realization of the advantages of RF switches and the key difficulties.Based on the SOI CMOS technology,a design method of high-channel-count RF switch is proposed.Finally,SP10 T and SP8 T RF switch based on SOI CMOS process which can be used in different frequency bands in real products is designed and manufactured.The design incorporates a digital logic control module that can be effectively controlled by the MIPI controller in PAM.The finished radio frequency switch design has been made of the film production and finished the test,the test results show that the single channel SP10 T switch in the corresponding band 1.7Ghz-2.7Ghz measured insertion loss is not higher than 0.8dB,channel isolation is not low at-25 dB.SP8T switch a single channel in the corresponding band 690MHz-960 MHz measured insertion loss is not higher than 0.6dB.Channel isolation is not less than-30 dB.The SP8 T and SP10 T RF switches designed in this paper can be used in the actual mobile communication links of mobile phones.All the parameters meet the design requirements,which will promote the research on the trend of mobile communication in multimode and multi-frequency working modes.