Novel Photoelectric Effect And Resistance Switching Effect Observed In Nano-Structures Of Metal-Semiconductor

The nano-structures of metal-semiconductor can generally exhibit more superior photoelectric effect and more obvious quantum effect compared with bulk materials of metal-semiconductor,which currently has a very broad application in energy,aerospace,information,technology,and other fields.In this thesis,our work mainly consists two parts.In the first part,we introduce a novel magnetically tuned photoelectric effect observed in the metal-oxide-semiconductor?MOS?structure,this effect strongly depends on the position of two electrodes,in which the biggest change rate of lateral photovoltage can reach to 94.15%.This result exceeded the previous reported change rate of lateral photovoltage in a magnetic field,which can effectively overcome the shortcomings of lateral photovoltage based devices with low sensitivity to external magnetic fields.By discussing formation mechanism of the lateral photovoltage,the physical mechanism behind this effect can be attributed to the edge effect on the asymmetric diffusion of photo-generated carriers.In this work based on nano-level design of the sample structure,we can acquire photoelectric devices sensitive to a small magnetic field,which has a magnitude in the order of Teslas.Our work extends a function of traditional lateral photovoltaic effect elements,and has a profound significance for the theoretical mechanism of novel photoelectric effect.In the second part,we report the light regulated resistance switching effect,we fabricated metal-insulator-metal?MIM?structures by magnetron sputtering,such as Ag-ZnO-Si and Ag-Ta₂O₅-Ag-Si samples,then studied the unipolar resistance switching characteristics,through endless improvement of experimental conditions to optimize the device's performance;Finally,the conductive filament model has been given to interpret the chemical reactions occurring in the resistive switching effect.In the light assistant switching effect,it is found that the participation of light can really change the density of current in the device,thus can change the resistance state.However,limited experimental equipment can not meet more precise conditions,how to further improve the service life of resistive switching elements is a major task for us.Even so,our work has laid a solid foundation for the evolution in the future in the fields of resistance memories and optical information storages.