The Preparation And Photoelectric Properties Of Antimony Selenide Film

Sb2Se3 film is generally P-type semiconductor film with the band gap about 1.0-1.2eV and the absorption coefficient about 105 cm-1. Sb2Se3 has the characteristics of low toxicity, green, abundant and inexpensive that is the emerging hot material in recent years with the presence of extensive research in the photoelectric detection, solar cells. However, studies about location detection and information storage has rarely been reported. In this paper, by a pulsed laser deposition technique I grow a nano- level Sb2Se3 film on a Si substrate, thereby to study the lateral photovoltaic effect and light- induced resistance effect, exploring multifunctional optoelectronic devices. The main contents are as follows:First, by using the pulsed laser deposition system I grow Sb2Se3 film with 54 nm thick on a P-type silicon layer. XRD, Raman, XPS, SEM characterization of Sb2Se3 films confirm getting a non-oxidized surface layer Sb2Se3 polycrystalline thin films.Secondly, by using the pulsed laser deposition system I grow Sb2Se3 films on the P-type Si, intrinsic silicon and the N-type silicon, and place two indium electrode on the surface of the Sb2Se3 film with spacing of 2mm, which constitute three kinds of the lateral photovoltaic sample. Since the internal electric field that is directed from Sb2Se3 thin film to Si substrate at the interface between Si and Sb2Se3 thin film, it will make the light- generated electrons injected into the Sb2Se3 film when the laser light irradiate the sample, thereby forming the electron concentration non-uniform distribution in the lateral direction, and thus the lateral photovoltaic phenomenon will be find in the sample. With the highest photo-generated electrons concentration and the shortest diffusion length in the P-type silicon sample, the highest lateral photovoltaic sensitivity and the strongest time resolution ability will be found in the P-type silicon sample.Thirdly, different thicknesses Sb2Se3 films are grown on the Si substrate, in which we find that there is an optimal Sb2Se3 film thickness with which the P-type Si/Sb2Se3 structure has the highest lateral photovoltaic sensitivity, and no matter the Sb2Se3 film thickening or thinning, the lateral photovoltaic sensitivity will reduce. By studying the effects of different electrode spacing of the Sb2Se3/P-type Si structure on lateral photovoltaic effect, the bigger that the distance between the electrodes,the litter that the lateral photovoltaic sensitivity.Finally, since a small amount of Se vacancies are generated in the film growth process, a photo- induced electricresistance phenomenon will be found in the the P-type Si/Sb2Se3 structure. The factors of different laser power and high voltage make the photo-induced electricresistance phenomenon happen.