Magnetic Tuning Of Photoelectric Effect In Nonmagnetic Metal-oxide-semiconductor Structures Of Merged Schottky Junctions

It is always a subject of intense interest to research photoelectric effects in nanostructures,because it can be applied in photoelectric detectors,photovoltaic cells,electric components and so on.Due to the wide application in optical transducers and position sensitive detectors,lateral photovoltaic effect is one of the typical photoelectric effects drawn wide attention.The feature of lateral photovoltaic effect is the linear relationship between the lateral photovoltage and incident laser position.Perivous work has made a large number of efforts to improve the sensitivity and linearity of LPE,such as changing materials and structures,or implementing external fields.As a common and typical external field,magnetic field has been widely used in the research of nanostructures,.For magnetic tuning of lateral photovoltaic effect,previous work mainly focus on the ferromagnetic structures,but all of them are with quite small LPV variation or request large magnetic field.These shortcomings hinder the application of researches to manufacture.Because magnetic field can influence the charge transport process in samples or devices through Lorenze force,it maybe induces magnetism-controlled photoelectric response even in nonmagnetic structures.So we guess that there will be magnetism-controlled lateral photovoltaic effect in nonmagnetic structures.In this article,According to the study that Schottky barrier height in mental nanoparticle film is variable,we designed the nonmagnetic grooved structures of merged Schottky junctions,Which has different Schottky barrier heights in different parts of the structure.Due to the movement of carrier will be limited in this structure,the carrier diffusion is asymmetry,and there will be significant response to magnetic field.In this grooved structure,we found a significant magnetism-controlled lateral photovoltaic effect in a very small magnetic field.In addition,we changed semiconductor layer material in the structures,and found that p-Si based structure has a more remarkable sensitivity to variation of magnetic field than n-Si based.We think it is because the different types of minority carrier in p-Si and n-Si.Meanwhile,we also changed the thickness of the metal layer on both sides in the grooved structure.It was found that the magnetism-controlled lateral photovoltage in the groove structure changes more and more obvious under the magnetic field with the increase of the thickness of the metal layer.These discoveries are the breakthrough in magnetic tunning of lateral photovoltaic effect,which can be applied in magnetic field detectors and has a high potential for applications of lateral photovoltaic effect.