Research And Application Of Photoelectric Sensors Based On MOS Structure

Recent years, MOS(Metal oxide-Oxide-Semiconductor) is a hot-button topic in the semiconductor structure research, the new photoelectric effect found in the structure can be widely used in high precision sensors. Its operating principle is that samples’ output electric signal regularly variate while the light source dot scanning the structure. For example, making use of the linearly characteristic between the lateral photovoltaic and the light point position, the lateral photovoltaic effect can be applied to the development of tiny displacement detecting PSD(Position Sensitive Detector). Due to the linear relationship and bipolar feature of the bipolar resistance effect, it can be applied to the development of raysistor, photo diode, the large density information storage device etc.To plate nano-film on the Si O2 layer, we mainly use vacuum magnetron sputtering, CVD(Chemical Vapor Deposition) and Sol-Gel method in laboratory, and then manually test the samples to obtain experimental data and curves. The photoelectrical detecting system developmented in this paper can control the fixture that clamping samples by computer software. When the samples move on X or Y direction by a certain step length and trace, the light source dot corresponding moves on the samples’ surface, and the samples output electrical signals. The detecting system collects corresponding electrical signals while the stepper motor is moving, inputs them into the computer after the analog-to-digital conversion, and finally computer software will automatically plotting according to the data. The MOS structure’s photoelectric characteristics research on one-dimensional direction is far more deeply than the two-dimensional direction, so this paper dose further study in the aspect of two-dimensional direction experimentally and theoretically.This papers’ research of lateral photovoltaic and bipolar resisitence effect based on the AZO-Si O2-Si structure. On the one hand, enhancing the photoelectric effect by the MOS structure manufacturing technique improvement; on the other hand, obtaining a more comprehensive data distribution diagram of the MOS structure by the improvement of detecting methods, and analyzing its application prospect for all kinds of photoelectric devices. The lateral photovoltaic and bipolar resistance sensitivity of AZO-Si O2-Si structure are 90.35 m V/mm and 686.37kΩ/mm, which all suitable for the sensors’ development. In this paper, we polt the 3D lateral photovoltaic and bipolar resistance data distribution diagrams of the MOS strucure, and present the theoretical analysis results and formula derivation process of the two effects that found in MOS structure. Finally, we study many application cases of lateral photovoltaic effect in photoelectric devices, such as: one-dimentional PSD detecting distance, straightness, angle, two-dimentional PSD detecting angle, parallelism, optical shaft encoder and so on; we also briefly introduce the application of bipolar effect in devices like raysistor and photo diode.