Research On SiC MOSFET PSpice Modeling With Temperature Characteristics

SiC MOSFET(silicon carbide field effect transistor)is widely used in aerospace,petroleum exploration and military manufacturing because of its fast switching speed,low on-resistance,high voltage strength and good high temperature characteristics.However,with the development of science and technology,the working conditions of these occasions are becoming more and more harsh,especially in terms of temperature.Power devices will change their physical structure in high temperature environment for a long time,which will lead to changes in their electrical characteristics,shorten the life of devices,and seriously affect the stability of converters.In this paper,the high temperature reliability of power devices is analyzed.For C2M0025120D of CREE Company,a SiC MOSFET model considering temperature effect is established by PSpice,which provides guidance for the application of power devices in high temperature situations.Firstly,the static and dynamic parameters affecting the high temperature reliability of the device are analyzed theoretically.Based on the switching process of SiC MOSFET,the switching loss model of the device considering temperature parameters is established,and the relevant simulation is carried out in PSpice.Secondly,for C2M0025120D in SiC MOSFET,a simple model is built by fitting curve method and parameter template method,and the components of device SPICE library file of CREE Inc.are analyzed,and the models obtained by these three methods are simulated and validated.Secondly,considering the secondary effect of the device in operation,the static model of the device based on physical formula is established.In order to make the characteristic curve of the model more consistent with the actual device,a SiC MOSFET model considering the temperature effect is established based on the hyperbolic tangent function,which includes the model of the device core,junction capacitance and diode.The parasitic inductance in the actual circuit is extracted and applied to the dual-pulse simulation circuit.Finally,according to the theoretical analysis and simulation results,the static characteristics of C2M0025120D are tested by KEYSIGHT B1505A,and a dual-pulse experimental platform is built to test the switching waveforms of power devices at four different temperatures.The experimental results are in agreement with the theoretical analysis and the simulation results,the accuracy of the model is verified.