Analysis And Research Of Electrical Characteristics Simulation Of MOSFET Based On ISE

MOSFET has merits like fine heat stabilization, large safety operation area and so on, so it attracted people's attention very early, but as device scale continue to shrink, some negative effects have appeared. To reduce or avoid the negative effects, majority focus on the interface quality and equivalent oxide thickness (EOT).We can attain the goal with using passivation layer and high k dielectric. The electrical characteristics of a kind of MOSFET including Silicon passivation layer and high k oxide layer were simulated by solving coupled Poisson-Schr(o|¨)dinger equations in a self-consistent way. The simulation results based on different device parameters (lightly n-type doped Ino.53Gao.47As, series resistance, interface traps and carrier mobility in channel) were compared with the experimental results in order to demonstrate the effect of these parameters on the performance of MOSFET. The results are as follows:(1) Changing the doping concentration of In_0.53Ga_0.47As and compare the simulation result and experiment result, we find that light n-type doping has little effect on I_ds- V_ds and can neglect its effect.(2) Adding donor type trap to interface and compare the simulation result and experiment result, we find that adding donor type trap to interface leads to rise of carrier density, and the latter effect can enhance drain current.(3) Adding series resistance and compare the simulation result and experiment result, we find that due to series resistance leads to reduction of drain current, so in order to reduce the effect of series resistance, we can enlarge the contact area of electrode.(4) Including the carrier mobility and compare the simulation result and experiment result, we find that carrier mobility increases as the gate voltage increases and the gate voltage should versus its mobility.(5)Taking into account the above four parameters, the simulation results reproduce the experimental results well, it indicate our model is right. In the four parameters, series resistance and carrier mobility have max influences, it can be an important basis for device design.