The Noise Model Of FinFET Devices

The FinFET with 3D structure not only has a lower threshold slope,but also enhances gate voltage control,reduces short-channel effects,improves energy efficiency,and reduces gate delay.These advantages make it become an alternative to components in new generation electronic circuits.Therefore,FinFET's superior performance has been rapidly applied in analog and RF circuits.However,due to the self-heating serious of the FinFET and the decrease in decoupling capacitance,the noise problem is more serious than being produced by other components,which becomes a hindrance to circuit applications.Good noise performance is one of the primary requirements in analog and RF circuits.Low-frequency noise measurement is a powerful tool for studying impurities and defects in semiconductor structures and for diagnosing the quality and reliability of semiconductor devices.In RF circuits,high frequency noise can severely limit the functionality of analog circuits.Therefore,it is crucial to have a noise model that accurately models the actual noise problem.The noise model can accurately estimate the average power of the noise during operation of the device,preparing for the circuit design to achieve the expected specifications.In this paper,based on the low frequency and high frequency,the small signal noise modeling of FinFET is carried out.In the low frequency band,considering the influence of self-heating effect on FinFET,the original low-frequency noise model is modified based on self-heating,and a FinFET low-ftequency noise small-signal model capable of characterizing self-heating is established.And the model is tested by actual test data.In the high frequency band,the FinFET high-frequency noise small-signal model is established based on the short-channel device,and the model is verified by the actual test data.Main tasks are as follows:(1)Explain the structure,working mechanism and fabrication process of FinFET,distinguish the difference between FinFET and traditional planar MOSFET,and briefly introduce the current BSIM-CMG model for FinFET.(2)Explain the cause of self-heating and the influence of it on the transistor.The self-heating small-signal model is modeled for FinFET and the corresponding noise parameter extraction algorithm is given.(3)Explain the influence of noise on the circuit,and introduce its principle,type,and simple model.For the low frequency noise,the FinFET small signal parameter extraction algorithm in LF and the BSIM-CMG based noise parameter extraction algorithm are given.For high frequency noise,the two-port network noise theory is briefly introduced.Then the FinFET high frequency noise model is carried out and relevant small signal parameters and high frequency noise parameter extraction algorithms are given.(4)According to the actual measured SMIC I4nm bulk FinFET data,the parameters of the low frequency and high frequency noise models are extracted and the model parameter extraction is verified by the Y parameter fitting condition.Parametric calculation is carried out to verify the accuracy and feasibility of the model and the scope of application of the model is analyzed.