Research On Damage Mechanism Under High Repetition Frequency Pulse Of Low Noise Amplifier

The receiver front-end system,low-noise amplifier(LNA)and mixer is more core and sensitive devices,high-power microwave(High Power Microwave,HPM)electromagnetic environment is vulnerable to front gate coupling damage,resulting in receiver function failure.HPM electromagnetic environment waveform parameters are rich,including power,repetition frequency,pulse width,etc.Studies have shown that microwave pulse waveform parameters have a significant impact on the effect threshold characterization of typical electronic devices.Experimental data show that the effect mechanism of microwave pulse power,frequency and pulse width parameters are basically clear,but the HPM effect mechanism under high repetition frequency parameters(greater than kHz)is less studied.With the continuous increase of HPM electromagnetic radiation repetition frequency parameters,it is important to understand and master the damage effect and mechanism of high repetition frequency HPM electromagnetic pulses on low noise amplifier.Based on thermodynamics and electronic circuit topology analogy method,the thesis used circuit simulation software ADS to construct a circuit model of high repetition frequency destruction effect of low-noise amplifier,through this electro-thermal coupling circuit model for LNA circuit-level transient thermal effect simulation,from the temperature rise law point of view to reasonably explain the thermal accumulation destruction effect mechanism law of low-noise amplifier under the action of high repetition frequency microwave pulses,carried out the S BJT low-noise amplifier effect sample design,processing and testing,build a S-band high frequency pulse injection test platform,carry out experimental research on the HPM effect of repetition frequency(1Hz?10MHz)and pulse number parameters,and obtain the influence of pulse repetition frequency and pulse number on the damage threshold and damage probability of LNA.Simulation calculations and analysis of experimental data show that:In the simulation calculation with pulse repetition frequency below 500 kHz,there is no obvious temperature accumulation,and after pulse repetition frequency greater than500 kHz,the device temperature increases to some extent after each pulse cycle,and the device burns up due to high temperature after multiple pulse cycles,and the degree of temperature accumulation is positively correlated with pulse repetition frequency and the number of pulses.At the extremely high repeating frequency parameter(about 1 MHz)injection test,there was a significant pulse accumulation effect,and the LNA damage threshold decreased with the increase of pulse number and repetition frequency,and the damage probability was positively correlated with the pulse number and repetition frequency.The damage threshold and damage probability of LNA do not change significantly when the pulse frequency is lower than 1MHz,independent of the repetition frequency and number of pulses.The difference between the experimental and simulation results of high repetition frequency damage threshold is not large,and the destruction mechanism law of repetition frequency parameters is basically the same,and the experiment verifies the validity of the thermal damage model in the thesis.