Research Of High-Speed Test And Conductance Quantization Of Memristor

The memristor is the fourth basic component after the resistor,capacitor and inductor.Its resistance can change with the direction and quantity of the electric charges flowing through it.When the variation of charge is below the resistance changing condition,its resistance can keep constant.Therefore,the memristor can be regarded as a kind of non-linear resistance device with memory function,possessing the advantages of fast operation speed,low power consumption,high density,high scalability and appreciable compatibility with CMOS process.It is one of the prime candidates to replace the Flash memory.It has been nearly a decade of the development process from the advent of memristor to the present.During this period,the performances of memristor have been greatly improved,besides,many new features have gradually been found.High-speed electrical characteristics and conductance quantization characteristics are two research hotspots based on memristor.It is of great significance to study the above two aspects for the development of atomic size switches,high-speed multi-level memory devices,and brain functional devices.In this paper,the traditional memristor test method and the test system are improved and optimized.Based on the sample structure and encapsulation of the memristor,a high-speed pulse test circuit with sufficient bandwidth and good signal integrity is designed.A high-speed test platform is built using the designed circuit,and we achieve the conventional test and high-speed pulse test of the memristor.Combined with the test results,its switching mechanisms and various electrical properties are demonstrated and analyzed.In this paper,conductance quantization of AgInSbTe-based memristor is tested,and the switching between different quantized conductance states is realized on a time scale of nanoseconds.We propose a module to explain the mechanism of conductance quantization,which provides the research object and theoretical basis for the development of high-speed multi-level memory device based on this phenomenon.