| Memristor is a two terminal device, it is the same with the resistance, with ohm’s dimension, it has a simple metal/dielectric/metal structure at the same time. Memristor has a number of advantages, such as high speed, low power consumption, and is compatible with conventional CMOS processes, etc, and the memristor has "memory" feature for resistance. Therefore, it is widely used in the field of digital, analog circuitry, memory and neural networks.Firstly, this paper introduces the basic concepts of memristor, discussed the current-voltage characteristics of linear memristor(LM) and non-linear memristor(NLM), the resistive mechanism of the memristor is introduced, the boundary drift model is established for the memristor mathematically, finally, we discussed the dielectric layer material systems and the electrode material systems of the memristor briefly.It introduces the basic electrical properties of resistive random access memory(RRAM) based on HfO2 film material. The advantage of the core material of memory device based on memristor is also introduced briefly, RRAM based on HfO2 film have been trail-manufactured, we use Keithley 4200-SCS to test and analyze the electrical performance of the device, consisting of current-voltage characteristics and reliability. Test results show that the device we prepared is bipolar device, and has good fatigue characteristics, data retention characteristics, etc.It introduces the multi-value storage feature of RRAM based on HfO2 film material. We tested the 4-value and 8-value storage characteristics of the device, then we use conductive filament model to analyze the cause of device can store multiple values. Then we further tested the 8-value storage characteristics of the device, the results show that the device has good 4-value storage characteristics and reliability, but for 8-value storage, the resistance distribution interval of a few adjacent resistance state is relatively small, therefor the device is not suitable for 8-value storage.It describes the paired-pulse facilitation phenomenon of flexible RRAM based on indium gallium zinc oxide(IGZO) thin film material, firstly, the related knowledge of paired-pulse facilitation(PPF) phenomena in biology are introduced, RRAM based on IGZO film have been trail-manufactured, we use Keithley 4200-SCS to test the device, two successive pulses with specific width, magnitude and time interval applied to the device, the results show that the device also has the synapses similar PPF behavior, then we test and analyzed the impact on the behavior of PPF with pulse interval, pulse magnitude and width, and explain the results with conductive filament model, finally, we test and analyze the impact on the behavior of PPF when bending the device. |
