| The advancement of semiconductor materials and processes has driven the reform of electronic devices,and driven the development of electronic information fields,from the first generation of semiconductor materials represented by silicon to the third generation of semiconductor materials represented by Ga N.Semiconductor integrated circuits have also undergone great changes.Because of the superior performance of gallium nitride compound semiconductor materials,gallium arsenide has gradually replaced the position of high performance power amplifier microwave monolithic integrated circuit.Compared to the previous generation of Ga As power amplifier chips,Ga N materials have larger band gaps,higher breakdown field strength and higher thermal conductivity,and Ga N high electron mobility transistors have higher power density,better in broadband performance and ability to handle higher power,so it can reduce the size of a single chip or use a smaller number of devices to meet the needs of the RF system,based on the above superior performance,making the Ga N power amplifier in wide-band,and high power amplifiers fields have very advantageous.Therefore,designing microwave monolithic integrated power amplifier circuits based on Ga N materials is currently a research hotspot.The evolution of wireless communications has made the available low-frequency frequencies even rarer,so more attention has been focused on millimeter-wave frequencies.5G communication technology covers a range of frequencies up to 100 GHz,making power amplifiers in the millimeter wave band even more powerful.Adopting the millimeter-wave frequency band not only solves the problem that the low-frequency band is insufficient,but also can help the terminal equipment to be more compact.Because the millimeter-wave frequency band has fewer interference sources,the transmission is more reliable.Currently,millimeter-wave microwave monolithic integrated circuits are mainly used in various advanced satellite communications systems and advanced phased-array radars based on land,sea and air.In the future,the power amplifier of Ga N materials will also play a greater role in the new generation of communication technologies.The current work on this topic has been carried out in response to the current shortage of MMIC types in the power amplifiers around 40 GHz.In this paper,based on the Ga N high electron mobility transistor(HEMT)process,two power amplifier microwave monolithic integrated circuits(MMIC)with output power greater than 5W and 8W at 38-44 GHz is developed.The circuit adopts three-stage cascade amplification,the appropriate total gate width is selected at each level,the circuit's optimal matching network is optimized using ADS,the input and output matching impedance is 50 ?,and the MMIC chip size optimized using electromagnetic field simulation technology is 5.8*2.32mm2.With gate voltage(Vgs)of-1.5V,leakage voltage(Vds)of 26 V,and input power(Pin)of 21 d Bm,the test results in the 38-44 GHz band of the circuit show that the output power is greater than 37 d Bm and the power gain is greater than 12 d B.The power-added efficiency is greater than20%.The chip was synthesized using a Lange power distribution/composite network.A chip size is 6.03*4.8mm2,the output power is 39 d Bm,the drain level efficiency is 18%,and input/output standing waves below 1.3 and 1.5 were respectively designed. |
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