Research And Design Of Microwave And Millimeter Wave Power Amplifier

In modern society,the radio communication technology and the market are becoming more and more mature,communication frequency resources are increasingly tense,the low frequency spectrum resources have been explored and exhausted,the millimeter wave band have great potential,and it also has the advantages of wide communication bandwidth etc.As a result,the millimeter wave frequency band,as the main frequency band of the new electronic technology,has been widely used in communication,radar,guidance and so on.As the core component of microwave and millimeter wave transceiver circuit,the performance of power amplifier directly determines the performance of the whole communication system,and the research on it is of great significance.At the same time,the processing precision required by the microwave frequency band is related to the wavelength of the working frequency,and the shorter the wavelength,the higher the processing precision.In order to meet the requirements of machining accuracy,the working frequency of the devices in the X band and above are more inclined to use the monolithic microwave integrated circuit(Monolithic Microwave Integrated Circuit,MMIC),MMIC is a kind of microwave circuit which integrates active and passive components on the same semiconductor substrate,working frequency is from 1GHz to 100 GHz above,It is different from the ordinary microwave integrated circuit(Microwave Integrated Circuit,MIC),the latter is a kind of hybrid integrated circuit which consist of different components using different processing technology.The active and passive components are integrated on the same substrate by welding or conductive adhesive and other external connection.The disadvantage is that the repeated production capacity is so poor that it is necessary to manually adjust the circuit to achieve designed performance,which makes it not suitable for mass production.In this paper,GaAs pHEMT technology based on WIN semiconductor is used,concentrating on the design theory and method of Ka band power amplifier,broadband matching structure,chip area compression techniques,low frequency stability and nonlinear stability method,and on the error correction method of the transistor model using PP1551 process.A high efficiency broadband power amplifier working at 32-40 GHz is designed and simulated,based on the WIN PP1011 semiconductor technology,the chip has been processed and passed the tested,the measured data show that output power is above 100 mW in the band and PAE is from 30% to 35.5% in the band.In addition,a 2W high linearity power amplifier working at 28-31 GHz is designed,it is based on the WIN semiconductor PP1551 process,the first round design and process has been completed.The test results show that the echo characteristics and IM3 index basically meet the requirements,PAE and saturated output power at high frequency part of working frequency band is inadequate,the overall small signal gain is also lacking.Through the analysis of the causes,the performence will be improved in the second round of chip design.At the same time,a T/R chip working at 33-36 GHz is designed,which is also based on the WIN PP1011 semiconductor technology,the electromagnetic simulation results show that the requirements are met.In the working frequency band of 33GHz-36 GHz,the input echo of the amplifier circuit is better than 13 dB,the output echo is better than 7dB,the small signal gain is greater than 13 dB,the saturation output power is greater than 28 dBm,and the PAE is greater than 22%;the return loss of the two ports of the low noise part is better than 17 dB,the small signal gain is greater than 13 dB and the noise factor is less than 2.3dB.