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Research On Reliability Evalation Technology Of Novel Anti-fuse Devices

Posted on:2019-01-17Degree:MasterType:Thesis
Country:ChinaCandidate:F PanFull Text:PDF
GTID:2348330569487891Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Along with the continuous development of the integrated circuit industry,the requirements of performance and reliability of the circuit are constantly increasing,as an integral part of the integrated circuit industry,the requirements of memory is also constantly increasing,requiring stable performance and high reliability.There are various kinds of memory on the market,but the PROM memory is still valued more and more with its superior performance.PROM memory is one-time programmable memory,data cannot be changed,if the storaged data need to be modified in the special circumstances,we can skip the already programmed storage area and update the data with a storage space that has not yet been programmed.In this case,the anti-fuse PROM with low cost and high reliability stands outIn aerospace field,high-energy charged particles produced by cosmic rays or istrong magnetic layers in the space environment can interfere with integrated circuits,in the military field,it is more likely to be subjected to various kinds of interference and changes in the natural environment,due to the stable and reliable storage data of anti-fuse PROM memory,it has an incomparable advantage in the outer space environment with strong radiation,large temperature difference and serious electromagnetic interference.The anti-fuse PROM has the advantages of fast reading,low power consumption,strong resistance to irradiation and high reliability,it is widely used in aviation environment.Since PROM is often used in harsh environments,it has a higher reliability requirement than other storage devices,the main purpose of this paper is to study the reliability of anti-fuse PROM memory.The anti-fuse structure is equivalent to a capacitor,saving the data '0' before the breakdown,and saving the data '1' after breakdown.In this paper,the reliability of the storage unit of the anti-fuse PROM is tested firstly,then the characteristics of breakdown voltage and breakdown are tested and the test method and test environment are described in details.In order to test the reliability of the anti-fuse PROM chip,a FPGA based PROM reliability test system is designed,the anti-fuse PROM memory is placed in the irradiation environment,then the data stored in the PROM is read in real time and is compared with the correct data saved,timely feedbacking comparison results.To ensure the safety of the testers when doing anti-irradiation experiments,the laboratory and the control site are separated,this requires the remote control test system,which needs to connect two computers with the network cable to form a LAN and realize remote control,the PROM memory is irradiated,but the FPGA is not,it also needs to isolate the PROM memory and FPGA.Through UART serial port,we can control the initialization of the anti-fuse PROM,read the data and compare it with the correct data,etc,and Finally,the correctness of the whole test system is verified by the board validation.
Keywords/Search Tags:anti-fuse Device, Lattice oxygen breakdown, Reliability test, Irradiation system
PDF Full Text Request
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