Research Of The AlGaInAs/InP Strain Compensated Quantum Well Laser

Because of its small size,long life and high reliability,semiconductor laser is widely used in different fields in society.In recent years,with electronic products increasingly diligence,intelligent people in the process of the use of these devices is more and more high to the requirement of data transmission,prompted the rapid development of communication industry,so the new laser chip as a hot topic of communication.In this paper,the relevant theoretical research on the transceiver laser chip in the field of information technology is carried out,and the software simulation and experimental analysis are carried out.This thesis focuses on the following research on quantum well laser:1.Firstly,the whole development process of semiconductor lasers,the research progress of semiconductor materials related to quantum well lasers,and the application fields of lasers are described systematically.The theoretical basis of quantum well is described,and the influence of the introduction of the source region strain on the light absorption and auger recombination is analyzed.2.Concrete comparison of InGaAsP/InP and Al GaInAs/InP material carrier of limited ability,using the software simulation has selected the quantum-well laser source area and material,compared the differential gain and the wavelength of gain,etc.,finally combined with theoretical and simulation results to determine the laser active area growth of AlGa InAs/InP materials.3.The design optimizes the source area of 1.31 mu m wavelength laser.Due to trap and chose AlGa InAs material bases,so through the theoretical calculation of the well and barrier layer of the same material with different set points of related parameters,with the help of a Hamiltonian matrix approximation to estimate the strain band gap.The relation between the width of the well and the wavelength of emission is derived by calculating the ground state energy of each subband according to the kloeh-penney model.The design laser is a pressure strain quantum well structure,so the growth defect is bound to occur when the experimental growth is extended,and the idea of strain compensation is combined to improve the strain accumulation effect of active region.Specifically: 1.14% pressure strain trap and 0.4% strain barrier.At the same time,the grating layer is optimized,the asymmetric phase shift grating structure is selected,the single mode characteristic of the laser is optimized,and the coupling coefficient is simulated to improve the laser space burn-hole effect and light power.4.Device designed the overall structure,first choose ALDS software simulation,decrease the cost of the later experiment,at the same time the power of the software to help us complete the key performance analysis of the design by laser,including threshold analysis,the steadystate analysis and spectrum analysis,etc.At the same time,the comparison model is designed,and the performance of strain compensation and uncompensated structure laser is compared.5.Design of laser in material growth chose MOCVD process,describes the growth process of the active region,the E-Beam etching grating technology combined with ICP dry etching technology,then by X-ray double crystal diffraction and optical fluorescence analysis to characterize the epitaxial growth plate for testing.The chip samples with high quality AlGaInAs/InP strain multi-quantum well lasers were produced to test the laser wavelength: 1310nm;Threshold current: Ith is less than or equal to 11mA;Single-sided slope efficiency: 0.443W/A.These main properties meet the main design indexes of the initial project.