Design And Epitaxial Growth Of In GaAs/GaAsP Materials For Semiconductor Laser Emitting Wavelength At 980nm

Due to the lattice mismatch between the InGaAs layer and the GaAs substrate, it is difficult to obtain high-quality epitaxial material. To reduce the negative impact of the strain-accumulation, a epitaxial structure of InGaAs/GaAsP is designed, through the theoretical calculations and the software simulations, we define the In content in the well layer as well as the P content in the barrier layer, on this basis, we study the effect on the LD property of the thickness of both the well and the barrier, we also study the impact of the QW number on the LD property,especially on the threshold current.To make the vertical divergence angle smaller,we optimize the thickness of the waveguide layer.The property of the MQW LD at the room temperature shows that, the threshold current is 233.5mA with a slope effiency of 0.667W/A(uncoated), when the operating current is 5A,the outpower can reach 3.2W,the vertical divergence angle is 19°.InGaAs/GaAs single quantum well is grown on different misoriented substrates by Metal-Organic Chemieal Vapor Deposition(MOCVD). The samples are characterized via photoluminescence(PL) spectroscopy at room temperature. The effect of offcut substrates, the growth temperature and Ⅴ/Ⅲ ratio of quantum well layer on emitting wavelength, PL intensity and Full Width at Half-Maximum(FWHM) is studied. GaAsP layers are inserted as barriers to compare to In GaAs/GaAs structure. The FWHM is narrower than that of InGaAs/GaAs structure with wavelength reveals a blueshift.The structure with a GaAs0.6P0.4 barrer exhibits an FWHM of 16.5 meV.