Research On High Linear High Power Multi-quantum Well Lasers

In recent years,there is a significant increase in Internet traffic,while the requirements for high-speed transmission is increasing,semiconductor lasers were widely used in the field of communications,and was extended to military security anti-missile,medical equipment,bio-engineering,industrial parts and so on.This paper mainly analyzes the research and development of the high-linear laser array chip in the optical transceiver array chip and the module project of broadband simulation communication in the national 863 plan,and makes a concrete theoretical analysis,software simulation and practical experiment.Through the multi-Direct modulation of the strain quantum well laser in the material selection,device structure of the theoretical research and device simulation.In this paper,the AlGa InAs material system is selected and discussed.The structural compensation parameters such as the amount of quantum well,the number of quantum wells,the width of the quantum well and the structural parameters of the laser such as the working temperature are discussed.Finally,based on the electrical characteristics such as the current and voltage threshold,the carrier density and the optical characteristics,the quantum active structure of the laser,the structure of the substrate,the structure of the grating,the basic principle and the key technology of the whole structure are designed to get what we need Direct Modulation of High Power and High Linear Quantum Well Lasers.This paper mainly studies the following aspects:1.A brief introduction to the development of semiconductor lasers,semiconductor materials,the principle and characteristics of light,including the principle of lasing and threshold current characteristics.The optimal quantum load and the differential gain of the laser are improved by the theoretical calculation and the actual growth optimization.The optimal quantum load and the differential gain of the laser are improved by optimizing the number,temperature and strain of the quantum well laser.Yu oscillation frequency,reduce the line width factor,reduce the frequency chirp,in order to achieve the requirements of high power laser.2.Based on the comparison of structural design and material growth technology of In GaAsP / InP and AlGa InAs / InP materials,the critical technology of DFB laser is studied by studying AlGa InAs / InP material system.And the differential gain and quantum efficiency of the laser are studied to realize the high frequency modulation characteristic of the laser.3.Study the structure of the grating:Through the grating structure to change the laser quality,the design of the gain coupled grating structure,the use of E-beam acquisition of different periods of phase shift grating,low damage ICP dry etching process technology.So that the "hole effect" has been significantly improved,greatly improving the linear indicators to ensure that single film output,control grating cycle,to achieve precise wavelength control.4.In the aspect of material growth,the new growth process is further studied on the basis of the existing material extension growth technology of MOCVD.From the growth condition analysis and the growth material selection,the growth scheme is determined and the performance requirements of high linearity direct modulation are prepared Of the multi-quantum well structure,providing high-quality epitaxial wafers.5.In the material and device structure,the use of ALDS laser material and structural design software packaging,high linearity direct modulation strain multiple quantum well DFB laser to adjust the quantum well of the optimal design of the index,the threshold current and other characteristics of the curve.Reaching the final implementation of the project book to complete the 1310 nm band analog communication high power laser chip samples(high frequency response coverage below 12 GHz frequency,single channel chip output power greater than 10dBm).