Epitaxial Growth And Luminescence Properties Of High-strain InGaAs Multi-quantum Well Lasers

In this paper, we designed and simulated a high-strain InGaAs multi-quantum well laser with theoretical analysis. We focused on the influence of strain on the InxGa1-xAs/GaAs multi-quantum lasers. The output wavelength of the lasers is 1.06?m and the threshold current is 194.8mA. In structure, double mode expansion layers multi-quantum well structure was employed and the vertical divergence angle of far field is only 13°. We also studied the threshold current, confinement factor and vertical angle of far field of the InGaAs multi-quantum well lasers and found that the lasers works with lower internal loss and high characteristic temperature.After the epitaxial growth of the active region, we compared experiment results and tested the PL(luminescence) under room temperature. Then the influence on the luminescence properties of the growth rate, ?/? ratio and substrate bias angle was discussed in detail. Final, we found that high quality epitaxial material was obtained under the condition of 650? growth temperature, ?/? ratio of 50, growth rate of 1.15?m/h and GaAs substrate of <111>2o bias.