Research On Ridge Waveguide 1.31μm GaInNAs High-Strain Quantum-Well Laser

The optical gain, output wavelength and temperature sensitivity of GaInNAs stain quantum-well wafers were described in this thesis. What caused these characteristics were analyzed in theory. The N-radicals incorporated into the active layer would lead to unusual bowing parameters and the causation of this situation was explained. Material of GaInNAs stain quantum-well laser grown by molecular beam epitaxy (MBE). Ridge waveguide GaInNAs stain single-quantum-well lasers were designed and fabricated with pulsed anodic oxidation(PAO). Moreover introduced and research on its production process system.The test of the laser showed: output power reached 14mW in cw mode at room temperature from the lasers with a wavelength of 1.31μm. The threshold-current was 18mA and it's density was 360A/cm2. The characteristic temperature of lasers was 135.1K and the quantum efficiency reached to 76%. All these data had shown the excellent characteristics of the GaInNAs quantum-well stain-compensated material.