Design Of A CMOS Wideband High-gain Low Noise Amplifier With Balanced Output

Recently,integrated radio chips have been widely used in navigation positioning,internet of things,mobile terminals,smart home and so on,which produces many kinds of communication protocols.In order to meet the needs of the market,a kind of receiver that is compatible for multi-standard has become one of the hottest discuss to meet the increasing demands of users.As the first stage of receiver,low noise amplifiers(LNA)are required to have wideband,high gain,low noise figure(NF)and impedance match.To fulfill the requirements of the receiver chain,LNA needs to put out a pair of differential signals with balanced amplitude and phase.In order to reduce the NF efficiently,noise cancelling technique has been widely used in LNA designs.The concept of noise cancelling can be generalized to different topologies according to a model which consists of the following functional blocks: an input matching amplifier stage,an auxiliary amplifier stage,and a network combing the outputs of the two amplifiers to cancel the noise of the matching device.According to different methods of input matching and auxiliary amplifier design,LNAs with noise cancelling can be divided into resistive feedback common source(CS)LNAs and CG-CS balun LNAs。Two wideband low-noise amplifiers(LNA)with integrated balun are designed in this paper,which are proposed for multi-standard radio applications between 45 MHz and 2.5GHz.One of the designed two LNAs is fabricated in TSMC 0.18μm 1P6 M RFCMOS process,and the measured results show it achieves a maximum power gain of 24.5d B,an NF of 2.6–4dB,and input reflection coefficient S11<-10 dB over a bandwidth of 0.045–2.5GHz.