Drain Saturation Current Uniformity Control In Manufactory

For semiconductor manufacturing industry,the technology innovation,the process flow design and the process controlling are the most important features,and they become highly restrictive with the reduction of the critical dimension.There is a difficulty that our engineers have to overcome,the product stability control for mass production,since electronic variations are extremely sensitive with the decreasing of gate size.For example,the typical physical gate length is less than 50% of the half pitch,and the value of 3 Sigma usually is 10%,for 90 nm node and 65/55 nm node technology product.Which means,for 90 nm technology,the critical size of the critical gate size control requirements of about 5nm,and for 65nm's is 3nm.Therefore,the process control is key factor to decide the stability of the product.This article mainly focuses on the controlling of the saturation current,Idsat,which is an assignable feature for an integrated circuit device.There are following sections,background knowledge introduction,the process flow designing,experiments & relating data collection,result analysis,and improvement.At the first part,formulas about Idsat and their relating information have been mentioned.Then lists the physical meaning of every parameter,including the correlation between Idsat and the detailed process step.Based on the result collected by setup the serials of experiment,the process window can be fixed on a roughly range.Then collect the in-line or off-line process data and finalized device parameter-saturation current.Through the variation and mapping of those data,find out the correlation about Idsat and Process Variation.At end of this paper,the author gives an summary about Idsat Uniformity induced the Process window margin.