Switch-signal Theory And Its Application For Dual Gate Field Effect Transistor

With the size reduction of the transistor,the transistor lithography manufacturing industry faces greater challenges,CMOS technology is approaching its physical limit,and in the present integrate circuit still mostly use the transistor CMOS technology,exploring new technology in the post CMOS era based on the technology and devices become a pressing matter of the moment.The technology of dual gate field effect transistor is a new type of field effect transistor which was proposed in recent years.However,one of the problems brought by the new technology and new materials is that the traditional design theory is no longer applicable.The lack of systematic design method limits the process of application.This paper takes dual-gate field-effect transistor as the research target.Based on the analysis of the conventional single-gate field-effect transistor targeted switching-signal theory,digital switching-signal theory targeting dual-gate field-effect transistor is presented.Switch-level circuits design method is built based on the proposed theory.Design examples show that the designed circuits have certain advantages in terms of the transistor number and circuit structure.This paper can be divided into the following sections:1?The establishment of FET switch-signal model: Searching the physical model of double gate field effect tube suitable,according to the specific manner of working,switch-signal model can be established to describe the actual working conditions of a single FET.2?The establishment of switch-signal theory facing dual gate FET: Discussion of the existing circuit switch level design method and analyzing the traditional single gate switch-signal theory of CMOS process can help to establish a method to design circuits by dual gate FETs.According to the corresponding relationship between the physical models and switch-signal models of dual gate FETs,the final dual gate circuits can be required from logic function.Consequently,the new gate circuit of low power structure is put forward.3?The design of circuit under the guidance of the double gate switch-signal theory: Taking the actual circuit as an example,firstly logic expression of the function should be listed,and switch level expression can be elicited according to the logic function.Then the switch-signal expression should be simplified step by step under the guidance of switch-signal theory facing the dual gate FET.Finally the needed double gate circuit is obtained.The experimental results show that thedouble gate circuit is more simple structure than the existing circuit and has some advantages in power consumption and delay.4?Exploring the different characteristics of the dual gate FET in different usage module,and introduce the sub conduction state of a dual gate FET.Three states 0,0.5,1 of the output voltage is shown by changing output loading.According to the nature of the sub conduction state,taking the dual gate FETs as the core,three value circuit can be worked out.The design example shows that the double gate field effect transistor provides the conditions in the study of multi valued logic and solve the bottleneck problem.