Growth Of Zno Semiconductor Thin Films Based On Protein Substrates

ZnO is the most representative semiconductor oxide material which has a very good performance in piezoelectric sensor,gas sensor,photoelectric sensor and so on based on its good biocompatibility.However,at present,the research of oxide semiconductor materials in the field of bio electronics is mainly focused on the non biological substrates and it restricts the development of ZnO semiconductor materials because of the lack of biological activity.If the ZnO can be controlled on the substrate with biological activity,it can lay a good foundation for the development of electronic components with good biocompatibility and biodegradability,which provides a favorable condition for exploring the future application of new bio electronic information system.The main work of this paper is as follows:1 ? Preparation and characterization of zein films: In this paper,the method of solution drop coating has been used to prepare the substrate material for ZnO growth.The experiments have been carried out by changing the concentration of ethanol,the amount of added water,the temperature of water bath,the content of plasticizer and the film forming medium.Zein films have been prepared under different conditions,and the optimal conditions for the preparation of zein films have been selected.The optimum conditions for the preparation of zein film as follows: the adding amount of zein powder is 5g,the concentration of ethanol is selected as 75%,adding is 40 ml,water bath temperature is set to 75?,the adding amount of plasticizer glycerin and peg-400 were1.5g.OHP plastic film is selected as the substrate material to prepare zein films.The properties of zein films are as follows: The tensile strength(TS)is 6.1 MPa,the elongation at break(EB)is about 129.5%,the water solubility is about 26.25%,and the transmittance is about 79.2%.The surface of zein films is smooth and has a certain degree of toughness,which provides a good basis for the next step to realize the controllable growth of ZnO at low temperature.2?Controlled growth of ZnO on zein films by RF magnetron sputtering: ZnO films material has been growed on zein films by changing the growth power and the ratio of argon to oxygen.The prepared ZnO thin films have been characterized by field emission electron scanning microscopy(SEM),XRD(PL),atomic force microscopy(AFM),energy dispersive spectroscopy(EDS),X ray diffraction(XRD),etc.And theexperimental conditions and process parameters were optimized.The effect of ZnO on the zein films was better when the vacuum degree of RF sputtering is set to 3.6×10-6Torr,argon(Ar): oxygen(O)is 70:30,the growth temperature is 70?,the growth pressure(P)is 8.2mTorr,the power is 100 W.In this paper,the controllable growth of ZnO on zein films has been successfully achieved at low temperature,which has laid a good foundation for the preparation and research of the biocompatible electronic devices in the future.