Preparation Of Attenuating Material Film By Magnetron Sputtering Technology

As the microwave vacuum electronic devices continue to the development of lightweight, miniaturization, integration, high reliability and low cost, it puts forward the higher requirements for microwave attenuating materials inside of the device. So it is very important and urgent to develop one kind of microwave attenuating materials with"light weight, wide frequency band, strong absorption and thin thickness" Our country is currently using a FeSiAl coating microwave attenuating materials, which has a very good initial permeability, and has no low melting point material and volatile substances in the material. By the method of coating and sintering, the absorbed energy can be quickly change into heat energy and conduct to the outside of tube. And it has simple process, good repeatability and high yield. After sintering, the thickness of the coating is 100?200?m,. At present a microwave vacuum electronic devices with a smaller volume is getting fast development, the thickness of the microwave attenuating materials must be achieved to nano or micro level, the traditional way of making the FeSiAl in coating and sintering.can't meet the this new requirementsIn this thesis, a plasma film coating technology-magnetron sputtering is used ——prepare nano or micro level microwave attenuating materialfilm.The author's main work is as following:(1) Using hot pressing sintering way, we have made the target material used for magnetron sputtering of attenuating material film successfully;(2) Using the magnetron sputtering technology, we have made the thin-film microwave attenuating materials which has good attenuation performance successfuly;(3) We analyze the microstructure and composition of the film of microwave attenuating materials, infering the attenuation mechanism of magnetron sputtering film attenuating materials;Through the research of the film preparation process, composition and morphology of microscopic analysis, we obtain the preparation process and characteristic of the film, which set up a good technology base for applying the film to devices. In the future through further research, it is expected to provide a new kind of attenuating material for the development of the high frequency microwave vacuum electronic devices with high frequency, broadband microwave absorption performance of nano or micro level thickness.