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Research On ZnO Film Preparation And Its Property By Radio Frequency Magnetron Sputtering

Posted on:2012-05-30Degree:MasterType:Thesis
Country:ChinaCandidate:H Y SunFull Text:PDF
GTID:2218330371951435Subject:Theoretical Physics
Abstract/Summary:PDF Full Text Request
Zinc oxide (ZnO) is a novelⅡ-Ⅳcompound semiconductor with a wide band gap of 3.7 eV. ZnO is an ideal short wavelength optoelectronic devices due to its high binding energy of 60 meV and strong excitonic emission at room temperature. At present, transistor with ZnO thin film as an active channel layer is the most favorite transistor because of its high optical transmission (>85%) in visible range and high mobility (orders of magnitude higher than common silicon thin film transistor).In this work, we studied the effects of experimental conditions on the properties of ZnO films deposited on glass substrates by radio frequency (RF) magnetron sputtering. The effects of the growth temperature on Ga-doped ZnO films, and the temperature on transistor with ZnO thin film as an active channel layer were studied. The main contents are as follows:(1) ZnO thin films was deposited on glass substrates by radio frequency (RF) magnetron sputtering technique with different experimental conditions, such as:substrate temperature, RF power, gas ratio of Ar to O2 and pressure. The X-ray diffractometery, scanning electron microscopy, atomic force microscopy techniques were used to investigate the lowest defect density and grain fabulous. It was found that the film had high crystal quality and grain fabulous when the temperature was 650℃, the power was 120 W, the ratio of Ar:02=40:20 and the pressure was 1 Pa. What's more, the film had high transmission (>85%), which is a perfect property for film transistor.(2) The Ga doped ZnO (3%) thin films were deposited on glass substrates at different temperatures. The effects of temperature on the properties of the films were studied. The results showed that all the films had high transmission (>85%), expect for the one deposited at 800℃, which may be caused by the melting of the glass, Meanwhile we found that, with the increase of the growth temperature increasing, the resistance of the film became lager.(3) The ZnO based transistors were prepared with Si as the bottom electrode, multilayer thin film of TiO2 and Ga2O3 was used as the gate dielectric, Ga doped ZnO as the active channel layer. The properties of the transistors were studied and discussed.
Keywords/Search Tags:ZnO thin film, magnetron sputtering, transistor, transmission
PDF Full Text Request
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