An Investigation Into Switching Characteristics Of Trench SOI-LDMOS Device

With the rise of portable devices,the world's energy demand continues to grow,how to improve the efficient use of resources will become increasingly important.Owing to the advantages of fast speed,high integration and low power consumption,SOI-LDMOS devices are widely used in power conversion switch circuits.And how to reduce the gate leakage charge QGD which affects the switching time of SOI-LDMOS device will be the focus of this paper.Firstly,the forward resistance and reversed breakdown voltage of the conventional trench SOI-LDMOS device and the extended drain trench SOI-LDMOS device are studied.The relationship between the gate-drain charge QGD,the on-resistance Ron,the breakdown voltage BV and the structure parameters of the above two devices is simulated by the simulation software Medici.Compared with the conventional trench SOI-LDMOS device,the breakdown voltage of the extended drain trench SOI-LDMOS device is increased by 52.18%,the on-resistance Ron is reduced by 8.8%and the gate-drain charge QGD is increased by 41.7%.Those changes play a guiding role in the optimization of gate-drain charge QGD.Finaly,a single-field plane extended drain trench SOI-LDMOS device and a double-field plane extended drain trench SOI-LDMOS device are proposed.Its main advantages are as follows:1)The gate-drain charge QGD and the Figure-of-Merit of single-field plate extended drain trench SOI-LDMOS device are respectively reduced by 7.1%,45.9%and 56.8%,42.2%as compared with conventional trench SOI-LDMOS device and extended drain trench SOI-LDMOS device;2)Compared with conventional trench SOI-LDMOS device and extended drain trench SOI-LDMOS device,the gate-drain charge QGD and the Figure-of-Merit of double-field plate extended drain trench SOI-LDMOS device are respectively reduced by 77.2%,86.72%and 85.7%,80.9%.In a word,a single-field plane extended drain trench SOI-LDMOS and a double-field plane extended drain trench SOI-LDMOS device are proposed in this paper to reduce the gate-drain charge QGD.These tasks are completed,not only the simulation of the DC characteristics and the gate-drain charge QGD of the device,but also the variation of the device parameters and the gate-drain charge QGD.In addition,its characteristics are verified.