Preparation And ? Characteristics Of 2D SnO Semiconductor Thin Film Field Effect Transistors

2 dimensional?2D?SnO semiconductor thin films and their applications in micro and nano electronic devices have been widely attention.In recent years,scientists have found that SnO has a high electron affinity?about 3.7eV?,the band gap is smaller?about 0.7eV?.At the same time,SnO also has a smaller ionization potential?about 4.4e V?of SnO materials and devices.The theoretical research proves that the larger electron affinity is more favorable for the n-type doping of the semiconductor,and the lower ionization potential is more favorable for p-doping.Therefore,bipolar electrical properties of SnO oxide semiconductor is expected to fabricate the high mobility channel thin film field effect transistors and CMOS devices.To solve the problem that prepare 2D simple micro and nano electronic devices and explore the characteristics of the 2 dimensional SnO semiconductor thin films.In this thesis,the fabricati-on and characterization of 2 dimensional SnO semiconductor thin films were studied by RF magnetron sputtering technique.The main research contents are as follows:1.Based on previous work,the preparation process and the influencing factors on the film properties of 2 dimensional SnO monolayer and multilayer film was studied.At the experiment,through high temperature sintering prepared the magnetron sputtering ceramic target using pure SnO powder,explore the best deposition parameters of sputtering,ensure Sn:O in the ratio of the monolayer SnO thin films approximately 1:1,solves the problem that emerge metal impurities such as Sn or SnO₂ under high temperature instability in the deposited films of SnO.2.The effects of different sputtering power,deposition time and annealing conditions on the structure and electronic properties of single layer and little layer SnO films with 2dimensional were studied.The prepared of SnO thin films with a thickness of 3.034nm and tetragonal structure.The Sn,O and other impurities in the films were analyzed by XPS spectra.The Sn 3d_5/2 peak and Sn 3d_3/2 peak of SnO were found at 486.13eV and 494.50eV at high resolution Sn 3d spectra,which confirmed that the elemental composition of the samples was about Sn:O approximately 1:1.3.The fabrication and IV characteristics of the p-channel SnO semiconductor devices with a few layers of bottom gate SnO semiconductor thin film are fabricated in this paper.The research results show that the output characteristics of the new thin film transistors are P.With the decrease of preparation of SnO semiconductor FETs sputtering power,deposition time and the channel width,the absolute value of source drain current is increasing.The transistor channel conductance can be modulated by the gate voltage provided,when the gate voltage is-5V,the maximum current value is 43?A.The I_DS between source drain current of the 300?high temperature rapid annealing fire device was higher than the unannealing device,the quantum transport effect of device is better than traditional CMOS devices.The results of this study show that the thin layer SnO semiconductor thin films have good electron transport properties.The research results provide some reference data for the future development of the new generation of micro and nano electronic devices.