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Multi Planar Magnetron Sputtering Device And Thickness Uniformity Of The Distribution Study

Posted on:2005-01-01Degree:MasterType:Thesis
Country:ChinaCandidate:L G HanFull Text:PDF
GTID:2208360125964163Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In this thesis,A new Radio Frequency(RF) magnetron sputtering system with rotation and revolution, that has more than one workbench, was presented .by the simulation ,the relation among the thickness(M) of thin film , rotation speed , revolution speed and the distance(H)from target to substrate has been found. So that the optimization uniformity film is able to be got by adjusting revolution, rotation voltage and the distance. it is known that the distance(H) has little influence on the film uniformity ,when the ratio() of the rotation speed to revolution is enough big ,so the sputtering Efficiency can be increased by reducing the distance .The thin films thickness distribution has less than 1% mean relative deviation and less than 6% max relative deviation in one chip with 4 inches diameter ,less than 1.5% mean relative deviation and less than 7% max relative deviation between chips with 4 inches diameter and less than 1.5% mean relative deviation and less than 8.3% max relative deviation between different, When the ratio() of the rotation speed to revolution speed is 5.3.
Keywords/Search Tags:Radio Frequency(RF) magnetron sputtering, thin films, rotation, revolution, Thickness uniform
PDF Full Text Request
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