Research On ZnO: N Film Preparation And Its Optical Property By Radio Frequency Magnetron Sputtering

Being a vigorous adversary of GaN, ZnO has lots of advantages and thus attracts much interest due to its prospects in potential optoelectronics applications. However the obtaining p-type ZnO is still being explored. this papers Using radio frequency magnetron sputtering, performs research on preparation for high-quality ZnO: N,structure and luminescent properties, specific contents as follows:1.By means of XRD diffraction spectra, substrate temperature,argon-nitrogen gas flow ratio,working pressure,annealling condition,Sputtering process to add a certain amount of oxygen and the grain size, grain growth orientation, the stress characteristics of the size structure impact. By the method of controlling variable, main parameters were changed in turn to find excellent film parameters with traits such as lower defect density,grain fabulous orientation. And ZnO:N film with better quality under relatively low temperature and relatively lower power.2. Through the study of the room temperature photoluminescence (PL spectrum), the impact of the substrate temperature, nitrogen argon flow ratio, work pressure, the different annealing conditions, sputtering process to add a certain amount of oxygen and other key process parameters on the thin film various emission peaks of ultraviolet luminescence and visible light was analyzed . The combination of thin-film stress, grain size, grain orientation and other structural features, analysis of the ZnO: N films of different film structure and the relationship between the luminescent properties.3. Combination of ZnO: N Thin Films conditions and room temperature photoluminescence spectra, discussed the effects of various factors of the ultraviolet luminescence on ZnO: N thin films. Analysis of several majors of the relationship between the visible light emission peaks with related to various defects and crystal states on ZnO thin films. The film with the main stress on the impact of the emission peak, an analysis of the mechanism of UV emission and how to optimize the performance of thin-film UV light-emitting and visible light emission mechanism was discussed.