Development And Optimization Of High-performance Hall Element

Tt's the era of electronic and information nowadays. Sensor technology, communications technology and computer technology are three important parts of this era. Especially some sensor technology for testing develops rapidly. According to different uses, there are many types of sensors, one of the most important category is Hall element, which is widely used,is the most important part for some department such as national defense, industry and so on. The main function of magnetic sensors is transforming magnetic signals into electrical signals.So the conversion efficiency is very important. Hall element made by Ga As is widely used for its outstanding advantages of good performance and reliability.The domestic market is in great demand for Ga As Hall element and mainly rely on imports. There are little company which can produce Ga As Hall element. And the quality of the elements they produced is much poor than the products by importing. Therefore, the design and optimization for high-quality Hall elements are very Significant. The main for parameters Hall element are offset voltage,hall voltage and input/output hall resistance. Offset voltage is the most important parameter. This article focuses on some parameters and makes some experimental analysis. With the method of simulation and analysis of test date, this article finds out the most appropriate solution to Hall element considering all kinds of factors,Four aspects of work has been done for the design of Hall element:1. Researching the basic principle of Hall element, creating the simulation model. Using the Maxwell tool to study the effects of misalignment to the offset voltage.2.Choosing the main factors which affect the quality of Hall element due to the layout of DOE. Designing all kinds of testing patterns and finishing the drawing of masks.3.Studying the methods of mesa etching, technology of Ohmic contact and passivation. Finding out the an etching solution made by H₃PO₄/H₂O₂/H₂O which is suitable for mesa etching. Finding out structure of Au Ge/Ni/Au and test model of CTLM. Using SiO₂ which is made by plasma enhanced chemical vapor deposition as a passivation. Finally setting the basic manufacturing process for Hall element.4.Completing all kinds of test on wafer, analyzing the testing data and finding out the effect of each parameter to offset voltage and hall voltage. Finding out the most appropriate solution to Hall element.