Novel Nano-Devices And Modeling Analysis Of Its Application Circuits

A quantum model based on non-equilibrium Green’s function(NEGF) and Poisson equation with self-consistent solution is adopted to investigate the electrical properties of carbon nano tube field-effect transistors(CNTFETs) and graphene nano ribbon field-effect transistors(GNRFETs) with different structures. Then, using the SPICE with look-up table based on Verilog-A models, the performance of circuits constructed by CNTFETs and GNRFETs is calcaulated. Furthermore, the characteristic of spin field-effect transistors(spinFET) and its consist of logic circuits is investigated. The main work of this paper can be summarized as follows:Firstly,electrical properties of n-i-n GNRFETs with HALO doping and lightly doping structure(HALO-LDD-GNRFETs) is presented. Compared with the conventional GNRFETs(C-GNRFETs) and lightly doped drain GNRFETs(LDD-GNRFETs), respectively, results are illustrated that HALO doping and LDD doping structure significantly improves on and off state current ratio and sub-threshold swing(SS), and suppresses short-channel effects(SCEs).The performance of exclusive-OR gate and adder circuits based on HALO-LDD-GNRFETs, LDD-GNRFETs and C-GNRFETs respectively are compared to illustrate the advantage of HALO doping and LDD doping structure in improving circuits performance, having lower power and better power delay product(PDP). And data flip-flop and multiplexing circuits based on HALO-LDD-GNRFETs are achieved.Secondly, a p-i-n CNTFETs with lightly doping and hetero gata dielectric(LD-HTFETs) is proposed.Compared with the High K gate dielectric TFETs(HK-TFETs) and Hetero gate dielectric TFET(HTFETs), it is showed that lightly doping and hetero gata dielectric sructure can significantly improve on/off current ratio,high-frequency properties and reduce SS,gate capacitance, resulting in LD-HTFETs have a better static and high-frequency characteristic. Furthermore, performace of logic circuits based LD-HTFETs have smallest delay,power,PDP and best stability. And simple ternary inverter based LD-HTFETs are realized.Finally, exploring the transport properties of spinFET based on NEGF has two cases, ferromagnetic parallel and anti-parallel configuration. Then, logic circuits based on spinFET has lower power and PDP compared with conventional MOSFET.