Application Of New Carbon-based Field Effect Transistors In Logic Circuit

This paper mainly analyze and research the devices of carbon base field effect tube which are based on the channel engineering technology and the gate engineering technology and the logic circuit constructed by them.At the device level,the influence of channel engineering technology and gate engineering technology on the transport characteristics of the new carbon-based field effect tube is discussed by using the quantum mechanics model of non-equilibrium Green 's function(NEGF)and Poisson' s self-consistent solution.At the circuit level,using the SPICE with look-up table based on Verilog-A models,the performance of logic circuits constructed by the new carbon base device is calcaulated.Through the research of this subject,it can provide theoretical basis for future carbon-based devices and circuit design.The main contents of this paper are:Firstly,the GNR HTFET is studied and compared with other related structures.The results show that this new structure can reduce the off-state current,thus increasing the switching current ratio,and sub-threshold swing is also reduced.Compare with the device of general structure HTFET has lower delay time and higher voltage gain.Secondly,the electrical characteristics of the CNT LDDS-HTFET were studied and compared with other related structures.The results show that this new structure can also reduce the off-state current,thus improving the switching current ratio.LDDS-HTFET has a higher cutoff frequency and lower gate capacitance,which suppresses the short channel effect.Finally,this paper uses Verilog-A to establish the look-up table(LUT)model on the basis of the transfer characteristics of the devices,and construct the corresponding circuit in SPICE to analyze its digital characteristics and compare with other circuit.For the inverter constructed by GNR HTFET,the transient characteristics are analyzed and compared with HKTFET.The results show that the inverter constructed by GNR HTFET has a smaller power consumption delay product(PDP),and its PDP with the gate length and supply voltage change rate is relatively small.Then,a variety of logic circuits are constructed by LDDS-HTFET,and the logic function of these logic circuits is verified.The circuit performance is compared with the general structure.The results show that the logic circuit constructed by the new structure has lower delay,power consumption and PDP,and the SRAM constructed by LDDS-HTFET has a relatively high noise margin.