| With the continually progress of III-V semiconductor technology, the microwave monolithic integrated circuit becomes smaller size, lower cost, less power consumption, lower noise and larger power density, so there are more and more application in modern communications, radar systems and missile guidances and other electronic equipment. This paper introduces the design process of two kinds of Ga As amplifier chip.The main research contents are:The design of a microwave monolithic power amplifier whose working frequency is 2.0~2.15 GHz and output power is 4W. The circuit uses two stages amplifier topology, using the 0.25 um p HEMT process, the output impedance of the amplifier is obtained by using load pull technique, which is designed to guarantee the maximum output power of the amplifier. The final stage power amplifier using Bus-Bar structure, achieving the DC feed and power synthesis at the same time, which can both guarantee the synthesis efficiency of the final stage and facilitate the realization of a large drain current feed. The final design results within the frequency range of 2.0~2.15 GHz, the output power is greater than 36 d Bm, the gain is greater than 35 d B, the efficiency is larger than 40%.The design of a 8mm(24~40GHz) microwave monolithic low noise amplifier. The circuit uses three stages amplifier topology, using the p HEMT 0.15 um process, a lowest noise match between the input stage and the interstage guarantee the amplifier circuit a level of low noise. The third stage circuit uses the Lang coupler to synthesize the third stage low noise amplifier, which ensure the VSWR of the output terminal, and the output power can be increased. Within the frequency range of 24~40GHz,the noise of the final layout below 2.2d B, and the gain is greater than 17 d B. |
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