| Indium phosphide double heterojunction transistor(InP DHBT) has high gain and high power density in high frequency, low white noise, good linearity, which is very ideally suitable for power amplifier, and it has gradually been developed to a very competitive technology in the field of MMIC now.The advantage of InP DHBT in millimeter-wave or even in terahertz, make the monolithic power amplifier based on it meaningful for pushing power amplifier to a higher frequency band. Based on InP DHBT process, the following research work is completed in this paper:1. The InP DHBT device features, including its device structure, operating principle and the high frequency performance are described. Meanwhile, the key problems of the InP DHBT device are briefly analyzed. In addition, for the problem that VBIC model in common SiGe HBT equivalent circuit model cannot simulate the characteristics of InP DHBT in some aspects, the device modeling were studied using Agilent HBT model and modeling methods in this paper. Increasing the accuracy of the model under the condition of high frequency by improving collector transit time, which has been verified in TMIC power amplifier and W-band monolithic VCO(Voltage Controlled Oscillator).2. Based on the extracted InP DHBT equivalent circuit model, a W-band monolithic power amplifier was designed. Simulated results show that the center frequency of the power amplifier is 94 GHz, and the 10 dB bandwidth is 24 GHz. The saturated output power in 94 GHz is greater than 18 dBm, and the associated power gain greater than 10 dB. The power amplifier was on-wafer tested after fabrication. The measurement results demonstrated that the small signal gain is more than 10 dB with in 75 ~ 87 GHz, and the output power is more than 13 dBm, of which achieved maximum output power 15.6 dBm at 82 GHz. Through testing on monitoring transistor and re-extracting and re-modeling of the model version, the frequency offset can be determined from the HBT model used in the design.This paper has a practical significance to the research of InP DHBT device modeling, the design of W-band monolithic VCO and power amplifier. |
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