| In recent years, with the rapid development of wireless communication, microwave broadband PA as wireless broadband communication system key module has great practical value. Gallium nitride(GaN) and other new semiconductor materials which have wide band, high electron mobility, high power density, has been used in microwave broadband power amplifier design. This thesis designed a microwave broadband power amplifier based on GaN. The 1-2.8GHz frequency range includes electronic warfare, GSM, WCDMA, WLAN, TD-SCDMA, LTE, Bluetooth and some radar frequency.This thesis made in-depth detailed study in broadband amplifier circuit topology(balanced, distributed, negative feedback, active matching,lossy matching) and broadband impedance matching network etc.On this basis, the DC supply network,then utilizing negative feedback circuit structure and variable resistance filtering matching network combined with Norton transform method, And then by using microstrip line replace capacitance and inductance,the lumped matching network have been converted to the mixed matching circuit have been designed. Combined with the ADS circuit simulation software, the broadband power amplifier have been designed by using CREE’s GaN HEMT CGH40010 and the driver amplifier have been designed with freescale,s MMG20271H9T1.Next, the design and machining of the power amplifier’s PCB layout and cavity and the driver amplifier have been completed,then this broadband amplifier have been debuged. Finally, the index parameters such as gain,gain flatness,output power and efficiency also have been tested.In this thesis, The final test results of the broadband microwave power amplifier circuit were shown below,frequency range 1000 MHz to 2800 MHz, output power reaches 9W, gain flatness is ? 1 dB, Gain reached 27 dB,input and output reflection coefficientwere isless than-10 dB, the second harmonic suppression inside passband is more than 21 dBc, PAE is 36%, and the final result of test meet the design requirements. |
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