The Design Of Millimeter Wave Up-conversion Mixer Chip

In recent years, big data, ultra-high-definition video and other technology of large storage capacity has been the rapid development. Wireless transmission of data presented its new needs, the existing wireless communication technology has been far from being able to meet people’s needs. Millimeter-wave wireless communication technology, with the absolute advantage of big broadband, become the future direction of civilian communications.Almost all conventional millimeter-wave communication is to meet military requirements, and has disadvantage of high cost, not easy miniaturization. Therefore low-cost CMOS process received extensive attention. China also made QLinkPan wireless communication standard based on the 45 GHz. It has weaker atmospheric attenuation than 60 GHz, which is widely used internationally. So it can communicate over longer distances. The up-conversion mixer and modulator designed in this topic are applied to 45 GHz band transmitters.This thesis established a simple model of the mixer, based on the research of mixer design. It mainly analyzed the relationship between the various departments of the mixer, conversion gain and three order intermodulation quantity.This provided a great help to optimize parameters of mixer. This thesis also studied the properties of some special techniques to improve the basic Gilbert mixer, including Multi-tanh technology and negative resistance technology, and these technologies are analyzed in this thesis; In the design of mixer’s balun, we established a six-port model for transformer, and detailed design method of the matching using balun, also analyzed and improved the balance of the balun in the process; This thesis also designed a millimeter wave OOK modulator with high isolation, and successfully applied to the transmitter system in the chip. The circuit used the basic dual gate mixer structure, and studied the related improvement techniques to enhance its isolation.In this thesis, all the circuits are designed using CMOS TSMC90 nmRF 1P9M process. In the designing of layout, some outlines are talked. The final simulation results of up-conversion mixer show that conversion gain is 5dB, bandwidth of IF is 4.3GHz, IIP3 is 0.89 dBm, OP1 dB is-3.5dBm. The final simulation results of modulator show that conversion gain is 1.1dB, data rate is 3Gbps, OP1 dB is 0.85 dBm, isolation is 65 dB, DC power is 64.8mW. In the case of the single local oscillator gain test results and the simulation results are consistent. And the isolation is 24 dB, which has meet the requirements of the system. Finally, the isolation of the transmitter chip using this structure modulator is 40 dB, which is different from the simulation results.This thesis analyzed its causes.