Modeling Of On-Chip Transmission Line And Small-Signal Modeling Of GaN HEMT

As the core of the electronics industry, the development of IC industry has great role in promoting for the progress of science and technology and economic development.At present, the integrated circuit industry have good development prospect.Use the circuit simulation software aided design is the basic method of designing circuit.The accuracy of the simulation depends on the accuracy of the model used.It is of great importance to build accurate device model.In this paper, the research content is the establishment of the equivalent circuit model of a transmission line and extraction method of the parameters in the model.Among them, the slow wave line as a high performance transmission lines, because of the shorter wavelength, can effectively reduce the chip area and has been widely concerned.However, the study of this kind of high performance transmission line is focused on the electromagnetic properties of different size structure, seldom has the research work of slow wave transmission line equivalent circuit model.This paper using the electromagnetic simulation tools ADS do the research of the performance of the slow wave transmission lines, determine the slow wave structure size of transmission line.Then equivalent circuit model is established for the slow wave transmission line.For each section of equivalent circuit structure of PI structure and T structure was improved, the model is modified to symmetrical form, can fit S parameters accurately without increasing the complexity of the model.GaN HEMT is a power devices suitable for high frequency and high power application.Relative to other semiconductor materials,it has wide band gap width, high electron mobility, large current density, It has attractted widely attention because of its excellent device performance.The traditional model may not apply for the different characteristics of new devices which appear constantly.So it is of great importance to do the research on establishing proper model.In this paper, a GaN HEMT model is established using the measurement data.Using empirical formula, and to make corresponding changes, extraction of model parameters, can accurately fit the measured dc characteristics, and use of unconventional curve fitting method, artificial neural network fast fit the characteristics of DC.Through external parasitic extraction, external capacitance, inductance and resistance extraction which has nothing to do with the bias,and the extraction of the equivalent circuit of the internal model, the small signal equivalent circuit model is established, and provides a basis for the large signal model. To sum up, this paper established the slow wave broadband equivalent circuit model of a transmission line, can effectively guide the design. Establish DC model and the small signal equivalent circuit model, provides the basis for the measured transistor application in circuit simulation...