Design Of Millimeter-Wave Frequency Multiplier

In recent years,with the rapid development of millimeter-wave wireless systems,the application of millimeter-wave frequency source in fields of imaging,medical treatment and military applications is becoming more and more popular.The application frequency band of the millimeter wave frequency source is also getting higher and higher,and the demand for the millimeter wave signal source is also more and more urgent.However,it is difficult to directly design a high frequency source.The frequency stability and phase noise are not as high as the high frequency source obtained from frequency doubling of the low frequency source.Therefore,it is necessary to extend the low frequency source to high by designing a frequency multiplier to meet the requirements of the communication system.As one of the constituent modules,the frequency multiplier boosts the frequency of the VCO to a higher frequency band,playing a decisive role on the performance of the frequency source.This thesis first expounds the significance of millimeter-wave frequency band multiplier,introduces the research status of millimeter-wave frequency multiplier at home and abroad,and then analyzes the design theory of frequency multiplier,the realization method and the performance requirements of millimeter-wave frequency band multiplier and several mainstream frequency multiplier design methods,and finally,based on the 1um InP HBT process and 0.45 um InP HEMT process frequency multiplier design.The main research contents and contributions are as follows:1.Based on 1um InP HBT process single transistor multiplier design was studied.The output power of the circuit is increased by using the transistor emitter to the quarter wavelength transmission line and a frequency doubler with an output frequency of 70 GHz is designed.Compared with the traditional single-frequency multiplier,the output power of the frequency multiplier designed by this structure is obviously improved.The frequency range of the circuit is 60~80GHz,the output power is-1.5d Bm,the power gain is-6.5d B,the harmonic Wave suppression ratio of 13 d Bc,the chip area is 0.265mm~2.2.Based on 1um InP HBT process,the design of wideband frequency doubler was studied.A pushpush 140 GHz frequency doubler was designed by using an on-chip stack transformer.Through the optimization of the transformer,a wideband frequency multiplier with output frequency range of 125~225GHz is realized.Compared with the traditional pushpush structure frequency multiplier,the output bandwidth is obviously improved,the output power reaches 0d Bm,the power gain is-5d B,the harmonic The suppression ratio reaches 19 d Bc.3.Based on the 0.45 um InP HEMT process single transistor doubler design and improvement.The use of microstrip instead of inductor approach,shortened the original circuit design cycle.The benefit of using microstrip lines is that theoretical calculations of the length and width of the microstrip lines can be used in the layout drawing in conjunction with the process layer information.The operating frequency of the circuit is 90~115GHz,the output power is-3d Bm,the power gain is-8d B,the fundamental rejection ratio is up to 20 d Bc,the layout area is 0.215mm~2,which is 0.05mm~2 smaller than the original layout area.