The 130 Nm CMOS Microwave And Millimeter Wave Circuits Design Based On Transmission Line

With the development of modern wireless communication technology,the microwave and millimeter wave integrated circuits have been gained more attention.The design of the microwave and millimeter wave circuits based on CMOS technology has been the research hotspot in recent years,because of its improved characteristic frequency.The transmission line(TL)frameworks have gained popularity in CMOS microwave and millimeter wave circuit designs.Based on the rigorous analysis of the characteristics of the transmission lines in Complementary Metal-Oxide-Semiconductor(CMOS)process,this dissertation proposes a K-band beamformer,a V-band three stage amplifier and a W-band multi-stage amplifier based on the 130 nm CMOS process.The main researches are as follows.By analysing the characteristics of the transmission lines based on 130 nm Complementary Metal-Oxide-Semiconductor(CMOS)process,a K-band beamformer is presented.The complementary-conducting-strip broadside coupled-line is adopted to improve coupling coefficient of the 130 nm CMOS coupled line;the multiple complementary-conducting-strip transmission line hich is used in the power combiner of the vector-sum-based phase shifter is adopted to reduce the chip size;the amplifier with flat group delay variation is used in the first stage of every element in the beamformer to compensate all the losses of the passive components.By analyzing group delay of every component,this beamformer achieves lower value of group delay variation.In the design of V-band three stage amplifier based on CCS-TL,the NMOS transistor size is decided by analyzing the maximum available gain.The transmission line is added between gate and drain of the NMOS transistor.By analyzing ite effect on the maximum available gain and two port impedance matching methods,the three stage V-band amplifier is designed by 130 CMOS process.The measurement results show the measured results of the 130 nm CMOS amplifier fit the simulated one.The 130 nm W-band CMOS multi-stage amplifier based on complementary-conducting-strip transmission line(CCS-TL)has been presented in this dissertation.The NMOS transistor size is decided also by analyzing the maximum available gain.The CCS-TLs are designed to improve Q-factor for input and output matching.A simple transmission line matching network is used for the input and output of the amplifier.CCS-TL based Marchand balun is used to combine output signals to achieve higher output power.The simulated results amdmeasured results show that the operating frequency of this 130 nm W-band CMOS multi-stage amplifier is beyond 100 GHz.