IGBT Driver Design

Isolated gate bipolar transistors (IGBTs) are widely used in power electronic filed. Properly designed drivers are extremely important for the performance of IGBTs. Because it is used to improve the energy conversion efficiency and protect the IGBT, it is the interface between power circuit and control circuit, it directly drives IGBT gate and monitor the IGBT state, so the IGBT driver chip design involves both for IGBT power semiconductor characteristics and the large scale integrated circuit processing technology.This thesis discusses in detail the structure and the work principle of IGBT, and its basic application system, including the driver system and isolation, and so on. Because IGBT is composite of a bipolar power transistor and field effect transistor, its input port is MOSFET, output port is PNP transistor. So the switching procedure is complex, and the turn on and turn off time is asymmetry, trailing phenomenon exists when turn off. For the IGBT driver design, therefore the discussion of IGBT takes up a lot of space.In addition, its basic application system and the feasible process selection is the necessary conditions of a chip design. A IGBT is generally used for inverter circuit, the high side and low side voltage difference is very big, therefore requiring isolation; the driving chip requirements not only high voltage and large current, but also integrated protection module and the integration degree and speed of response. BCD technology is the best choice. So discuss the isolation technology and the BCD manufacture technology.Finally, with the help of Grace Semiconductor Manufacturing Corporation SPICE model library, design and simulation it. This design includes the driver module, the overvoltage and under-voltage protection module, a desaturation monitor module and a slow turn-off function. Through Hspice simulation and verification, the driver is suitable to the general discrete deviecs.