Research And Implementation Of IGBT Gate Control Method For Smart Power Driver ICS

The monolithic smart power driver integrated circuits, because of its high integration, low power consumption and high reliability, whichis widely emplyedin the low-power and high-reliability power electronic application systems (such as motor drive, power management, etc.).Due to the insulated gate bipolar transistor (IGBT) as a power output stage is integrated in monolithic smart power driver integrated circuits.its switching overshoots has theserious influences on the reliability and power consumption requirements of monolithic smart power driver integrated circuits.As the key technology ofmonolithic smart power driver integrated circuits, the gate control technique for IGBTs has a crucialimpact on the reliability and power consumption of the system, which is mainly embodied in the control of noise suppression and loss reduction.Thethesis hasa deep research on the conventional gate control techniqueof IGBT,which is found that the conventional gate control technique recuces the swiching loss by accelerating switching speed of IGBTs.However, it results in large voltage or current overshoot, which leads to a negative effect on the reliability of system.In order to reduce current and voltage overshoots, the conventional gate control technique mitigate the switching speed, however, it leads to greater switching losses. The tradeoff optimization of the conventional gate control technique can not meet the low power consumption and high reliability requirements. The proposed close-loop gate control technique for IGBTs employs the gradient-regulated method withdvC/dt and diC/dtfeedback control, so as to achieve an optimized trade-off between switching overshootsand switching losses. As a result, both overshoots and losses can be effectively mitigated. The relationships between the controlled voltage overshoot, current overshoot and associated energy losses are derived and can provide guidelines for practical design.The proposed gradient-regulated close-loop gate control technique has been implemented in 600V 0.5 ?m BCD technology. Compared to a conventional gate controlling technique, the measurement results show that the proposed gradient-regulated close-loop gate controlling technique has an effective control in voltage overshoot and current overshoot,with the reduction of 57.9% and 56.8%, respectively. Also, the turn-off and turn-on loss are reduced by 12.9% and 7%,respectively.The dadicate that the proposed close-loop gate control technique can optimize the relationship between switching overshootsand switching losses.