The Wafer Cutting Parameters Influence On The Reliability Of The Low K Dielectric Layer

For some low dielectric constant material products with film(low-k product) in the circuit structure, due to the characteristics of material itself, it appears chipping、crack、the metal layer peeling、metal remain and the metal debris contamination phenomenon in the process of wafer sawing easily. In order to overcome and solve a series of this problems, the thesis studied a number of technological measures、auxiliary tools and related materials selection、optimization based on conventional cutting process. Finally it is better to solve the above problems including the process of production, to ensure the quality of the cutting process, increase the enterprise’s efficiency and economic benefits.During the study, we introduced the laser groove technology, before the application of conventional blade (mechanical) saw to split on the independent wafer cutting units, we using laser groove technology in the region of the wafer surface scribing slot at first, and then to complete separation of the device by the blade sawing. This text studies the related process conditions、environmental improvement and optimization; The wafer sawing process is a systematic project, the purpose is to make the sawing process reach a certain quality requirements, some auxiliary tools used in process, related material also need to match with the process, I explained the study of the sawing blades, tools and materials such as adhesive tape and soluble material effect on sawing quality in my work. Further improved the low dielectric constant (low-k) product improvement and optimization of sawing process, the parameters was controlled by related requirements and determine the suitable process conditions and scope, improve the reliable and stability of the final product. At meanwhile, this point also important for other special device for higher control requirements (trend for thinner wafer、the multiple material of product、more complicated circuit structure, etc.)of the wafer accordingly complex, unified and implementation to provide related basis and reference.