The Characteristic Analysis And Design Optimization Of PIN Tunneling Field-effect Transistor

The smallest core units structure of integrated circuit is transistor, Shrinking its size is thesource power of development of the integrated circuit technology, which is also thedevelopment mainstream of microelectronics science and technology. The purpose is toachieve high performance, low operating power, low standby power consumption and highintegration. However, in the deep submicron (less than100nanometers) or nanoscale (a dozenor a few nanometers) field, the negative effects which is not existing in regular size technologycome into being. With the reduction of the size, the fallen of threshold voltage, thedegeneration of subthreshold swing, the reduction of leakage induction barrier,the fluctuationsof device characteristics caused by random doping of the channel, the leakage current causedby electricity tunneling, band-to-band tunneling in the junction, etc., the performance andreliability of the integrated circuit will get extremely negative effects.This paper introduces the principle of PN junction tunneling(band-to-band tunneling), theworking principle of MOSFET （diffusion and drift of carrier）, the advantages anddisadvantages. On the research of the traditional PIN tunneling field-effect transistor（TFET）and according to the tunneling probability factor, the influence of the device structure andparameters on TFET performance can be studied. We can optimize the device by changing thethickness and materials of the insulating layer, the doping concentration of the source anddrain, and using the structure of the extended source area to the channel. A variety of structureand parameters are compared by silvaco simulation software and optimize the PIN tunnelingfield-effect transistor on structure and parameters. This optimized structure compares to thetraditional structure of PIN, the open current is about to6000times, reverse current can bereduced to1/50000and even lower, the subthreshold swing(SS)can be less than60mv/dec.The features of TFET in power consumption, the size and the switch conversion etc., issuperior to the MOSFET.