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Design Of High Efficiency Frequency Multiplier

Posted on:2016-11-14Degree:MasterType:Thesis
Country:ChinaCandidate:Y W WangFull Text:PDF
GTID:2298330452965287Subject:Electromagnetic field and microwave technology
Abstract/Summary:PDF Full Text Request
As the key component of the modern electronic systems, the performance of highefficiency frequency multiplier determines the quality of the entire system. High efficientfrequency multiplier develops very fast with the development of communication technology,since the continuous exploration and development of the space detection technology inmilimeter wave band, the need of efficient, stable, high power signal source in this band ismore and more urgent. Compared with oscillation frequency source, frequency sourcesobtained by frequency multiplication technology can not only improve the reliability andstability of frequency sources, but also expand available domain to millimeter wave andsub-millimeter even terahertz. The high output power frequency source whose performanceto some extent determines the quality of the entire system is needed in mosttransmit-receive system, therefore it is of great practical significance in research of highefficiency frequency multiplier.The development and application of millimeter wave frequency multiplier in recentyears were first introduced in this thesis. The transmission characteristics and loss of theplanar microstrip were presented, and the waveguide to microstrip transition was analyzed.Meanwhile, the basic theory and typical structure of frequency multiplier were discussed.The Schottky diode DBES105a was utilized to make a F band passive tripler and a F bandactive tripler and design two kinds of F band frequency doubler. The varactor5VA40-10was used to design a170GHz tripler and a220GHz tripler. Based on quartz, all of themwere fed in and fed out by standard rectangular waveguide. In the first place, the design ofthe passive parts were obtained by using3D electromagnetic field analysis software HFSS.Secondly, the equivalent circuit model of the diode was established and simulated in ADSbased on the parameter of it. At last, the data of passive parts was imported into ADS andthe whole circuit was optimized in order to achieve the best output power.According to the measured results, when the input power is17dBm, the peak outputpower of the No.1F band passive tripler is-1.1dBm at97GHz, and the max output powerof No.2F band passive tripler is0.86dBm at88GHz. The triplers above have widebandcharacteristic whose bandwidth are more than20GHz. Meanwhile, for the F band active tripler, the peak output power of it is6.58dBm and the efficiency is about13%at115GHzwhen the input power is15dBm, the output power is more than5dBm and the efficiency isgreater than10%between114.5~117GHz. Compared with the passive tripler, DC biasvoltage can significantly increase the output power and efficiency of the multiplier on thebasis of measured results. The test results show the validity of the proposed method.The measured results are analyzed and some improving advices are put forward in thispaper, which make us accumulate some experience on the research of millimeter wavefrequency multiplier and have positive significance and promotion to develop millimeterwave frequency multiplier.
Keywords/Search Tags:high efficiency frequency multiplier, millimeter wave, diodes
PDF Full Text Request
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