Study On The Four-wave Mixing Effects Of Silicon Waveguides

Appeared with the development of electronic technology meeting the bottleneckrestriction, people have to turn to a more superior properties of photons thanelectronic, using high speed response of photons instead of electrons, so as to solvethe electronic technology and overcome the restriction. Silicon-based waveguide is apropagation carrier of photon, which has unique performance that can’t be matched byother materials. It has a large third-order nonlinear characteristic, high Kerrcoefficients and large Raman gain coefficient, which can confine the light tightly andmakes nonlinear effects effectively in this optical waveguide. In addition, combiningsilicon and other materials, give full play to their respective advantages, which is alsoopen up new road for the application of silicon waveguide. This paper mainly focuseson the four-wave mixing application of silicon waveguide. Through the design of thewaveguide structure, the effective wavelength conversion and parametricamplification are achieved in the infrared and mid-infrared waveband. The mainresults of this paper are summarized as follows:1．Silicon crystal optical properties and industrial application are introduced, andstructural classification and silicon waveguide coupling methods are discussed in thissection. Then we analyze the application and development of silicon waveguide in thelinear and nonlinear aspects.2. The dispersion equation of silicon and several common materials are analyzed,and the mode distribution and dispersion engineering of silicon waveguide arediscussed. From the classical Maxwell equation, the transport equation in SOIwaveguide and the numerical method for solving equations are deduced in detail.Simultaneously, the physical mechanism of supercontinuum generation is expoundedin this paper.3. Combining silicon with high nonlinear organic material, forms an organichybrid slot waveguide. By calculating the dispersion, mode distribution, nonlinear coefficient and effective mode area of the horizontal and vertical slot waveguides, thehorizontal waveguide is found more suitable for nonlinear application. Then by usingthis structure for wavelength conversion, a conversion efficiency of7.45dB on a4mm long waveguide was obtained.4. A channel waveguide which combined with silicon nanocrystals and siliconwas proposed to be used in mid-infrared. By adjusting the waveguide parameters suchas height, width, the thickness of the intermediate to optimize waveguide dispersion,flat dispersion curves are obtained. By using four-wave mixing effect in the channelwaveguide, which has high nonlinear coefficient and small area of the mode,parametric amplification is realized in the mid-infrared.