Design Of10Gb/s Optical Receiver Based On0.13μm CMOS Technology

With the development of the modern communication technology, the transmissionsystem of high-speed, wide bandwidth and low cost is imperatively in need. Due to itsunparalleled advantages in speed, bandwidth and price, optical interconnection has beenwidely paid attention.Photo-detector and preamplifier of the optical receiver has just been researched.In this paper, with the design ideas of the devices in CMOS technology fullyabsorbed and combining the existing photo-detector structures and the design rules, anew structure of high-speed photo-detector with deep n-well is innovatively presentedwhich is based on the technology of mixed-doping and periodic voltage, throughremoving the slow part of the electron diffusion current. The new design is completelycompatible with the working speed of the device and noise characteristics improved.Then the simulation with MATLAB is performed to verify its advantages. Thewavelength, electric field, current, bandwidth and noise is fully simulated which showsthat: Under the wavelength of850nm,1V periodic voltage and10μm distance betweenthe electrode,1.47GHz bandwidth is realized. This new structure shows goodperformance in noise, bandwidth and current response.Based on the analysis of the research home and abroad, following the design ideaof amplifier, a circuit with RGC structure, inductor peaking technology and negativefeedback technology is designed in10Gb/s data transition. Finally, the gain of39dB,-3dB bandwidth of8.01GHz, noise current density of11.6pA/(Hz)1/2and output swingof80mV is reached through Spectre simulation.